Semicondcutor package and manufacturing method thereof

ABSTRACT

A semiconductor package includes an encapsulated semiconductor device, a redistribution structure, and a protection layer. The encapsulated semiconductor device includes a semiconductor device and an encapsulating material encapsulating the semiconductor device. The redistribution structure is disposed on the encapsulated semiconductor device and includes a dielectric layer and a redistribution circuit layer electrically connected to the semiconductor device. The protection layer at least covers the dielectric layer, wherein an oxygen permeability or a water vapor permeability of the protection layer is substantially lower than an oxygen permeability or a vapor permeability of the dielectric layer.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims the priority benefit of U.S. provisionalapplication Ser. No. 62/587,454, filed on Nov. 16, 2017. The entirety ofthe above-mentioned patent application is hereby incorporated byreference herein and made a part of this specification.

BACKGROUND

Semiconductor devices are used in a variety of electronic applications,such as personal computers, cell phones, digital cameras, and otherelectronic equipment. Semiconductor devices are typically fabricated bysequentially depositing insulating or dielectric layers, conductivelayers, and semiconductor layers of material over a semiconductorsubstrate, and patterning the various material layers using lithographyto form circuit components and elements thereon. Many integratedcircuits are typically manufactured on a single semiconductor wafer. Thedies of the wafer may be processed and packaged at the wafer level, andvarious technologies have been developed for wafer level packaging.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 to FIG. 8 are schematic cross sectional views of various stagesin the manufacturing process of a semiconductor package according tosome exemplary embodiments of the present disclosure.

FIG. 8A illustrates a cross sectional view of a semiconductor packageaccording to some exemplary embodiments of the present disclosure.

FIG. 9 to FIG. 12 are schematic cross sectional views of various stagesin the manufacturing process of a semiconductor package according tosome exemplary embodiments of the present disclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

In addition, terms, such as “first,” “second,” “third,” “fourth,” andthe like, may be used herein for ease of description to describe similaror different element(s) or feature(s) as illustrated in the figures, andmay be used interchangeably depending on the order of the presence orthe contexts of the description.

FIG. 1 to FIG. 8 are schematic cross sectional views of various stagesin the manufacturing process of a semiconductor package according tosome exemplary embodiments of the present disclosure. In exemplaryembodiments, the semiconductor manufacturing process may be part of awafer level packaging process. In some embodiments, one die is shown torepresent plural dies of the wafer, and one single package is shown torepresent plural semiconductor packages obtained following thesemiconductor manufacturing process. The manufacturing process of thesemiconductor package 100 shown in FIG. 8 may include the followingsteps. Referring to FIG. 1, in some embodiments, a carrier 10 isprovided. The carrier 10 may be a glass carrier or any suitable carrierfor the manufacturing process of the semiconductor package 100. In someembodiments, the carrier 10 may be coated with a de-bonding layer 11.The material of the debond layer may be any material suitable forde-bonding the carrier 10 from the above layers disposed thereon. Forexample, the de-bonding layer 11 may be a ultra-violet (UV) curableadhesive, a heat curable adhesive, an optical clear adhesive or alight-to-heat conversion (LTHC) adhesive, or the like, although othertypes of de-bonding layer may be used. In addition, the de-bonding layer11 may be also adapted to allow light or signal to pass through. It isnoted that the materials of the de-bonding layer 11 and the carrier 10are merely for illustration, and the disclosure is not limited thereto.

In some embodiments, the carrier 10 may further include a dielectriclayer 190 formed thereon. The dielectric layer 190 may be apolybenzoxazole (PBO) layer formed on the de-bonding layer 11, forexample. It is noted that, in some embodiments, the dielectric layer 190may be omitted. In other words, the formation of the dielectric layer190 is optional in some alternative embodiments.

Then, a plurality of conductive pillars 116′ are formed on the carrier10. In some embodiments, the conductive pillars 116′ are formed over thecarrier 10 (e.g. on the dielectric layer 190, or on the de-bonding layer11 if the dielectric layer 190 is omitted) by photolithography, plating,and photoresist stripping process, etc. In some alternative embodiments,the conductive pillars 116′ may be pre-fabricated through otherprocesses and are mounted over the carrier 10. For example, theconductive pillars 116′ may be copper posts or other metallic posts.

Referring to FIG. 2, in some embodiments, at least one semiconductordevice 112′ may be disposed on the carrier 10. The semiconductor device112′ may be attached or adhered over the carrier 10 (e.g. on thedielectric layer 190, or on the de-bonding layer 11 if the dielectriclayer 190 is omitted) through a die attach film (not shown), an adhesionpaste or the like. The semiconductor device 112′ may include a pluralityof electrical terminals 112 a′ disposed on an active surface of thesemiconductor device 112′ and an insulation layer 112 b′ covering theelectrical terminals 112 a′. In some alternative embodiments, theinsulation layer 112 b′ may expose the electrical terminals 112 a′. Inthe present embodiment, the semiconductor device 112′ is disposed on thecarrier 10 with the active surface facing away from the carrier 10 (i.e.facing up). In some alternative embodiments, more than one of thesemiconductor devices 112′ may be disposed on the carrier 10. Thedisclosure does not limit the number of the semiconductor device 112′.In some embodiments, the conductive pillars 116′ are arrange aside andaround the semiconductor device 112′.

Then, an encapsulating material 114′ is formed on the carrier 10 andencapsulates the semiconductor device 112′ and the conductive pillars116′. In some embodiments, the encapsulating material 114′ fills thegaps between the semiconductor device 112′ and the conductive pillars116′, and covers the carrier 10. In some embodiments, the encapsulatingmaterial 114′ is a single-layered encapsulating material, which mayinclude a molding compound formed by a molding process. The material ofthe encapsulating material 114′ may include epoxy or other suitableresins. For example, the encapsulating material 114′ may be epoxy resincontaining chemical filler. In some embodiments, the encapsulatingmaterial 114′ is formed over the semiconductor device 112′ and coversthe top surfaces of the conductive pillars 116′ and the active surfaceof the semiconductor device 112′, so as to form an encapsulatedsemiconductor device 110′ on the carrier 10.

Referring to FIG. 3, in some embodiments, the encapsulating material114′ is planarized to reveal the conductive pillars 116′ and thesemiconductor device 112′. In some embodiment, the top surface of theencapsulated semiconductor device 110′ are ground and polished until theconductive pillars 116′ and the electrical terminals 112 a′ of thesemiconductor device 112′ are revealed. After the encapsulating material114′ is ground, an encapsulated semiconductor device 110 as shown inFIG. 3 is formed on the carrier 10. The encapsulated semiconductordevice 110 may have a wafer form in the process. In some embodiments,during the grinding process of the encapsulating material 114, topportions of the conductive pillars 116′, the insulation layer 112 b′ andthe electrical terminals 112 a′ are also ground to form the encapsulatedsemiconductor device 110. Accordingly, a ground surface of theencapsulating material 114 is substantially coplanar with the topsurfaces of the conductive pillars 116 and the electrical terminals 112a of the semiconductor device 112. In some embodiments, the insulationlayer 112 b′ is also ground to form the insulation layer 112 b forrevealing the electrical terminals 112 a underneath.

In some embodiments, the encapsulated semiconductor device 110 includesa semiconductor device 112 and an encapsulating material 114encapsulating the semiconductor device 112 and the conductive pillars116 as shown in FIG. 3. The encapsulating material 114 reveals theelectrical terminals 112 a of the semiconductor device 112 and the topsurfaces of the conductive pillars 116. The grinding process of theencapsulating material 114 may include mechanical grinding or chemicalmechanical polishing (CMP), for example. After the grinding process, acleaning step may be optionally performed, for example, to clean andremove the residue generated from the grinding step. However, thedisclosure is not limited thereto, and the planarizing step may beperformed through any other suitable method.

Referring to FIG. 4, a redistribution structure 120 is formed on theencapsulated semiconductor device 110. In some embodiments, theredistribution structure 120 is formed on the encapsulating material 114and semiconductor device 112. The redistribution structure 120 iselectrically connected to the conductive pillars 116 and the electricalterminals 112 a of the semiconductor device 112. In some embodiments, aplurality of dielectric layers and a plurality of redistribution circuitlayers may be stacked on top of one another alternately to form theredistribution structure 120 shown in FIG. 4. The redistributionstructure 120 at least includes a dielectric layer 122 and aredistribution circuit layer 124 electrically connected to thesemiconductor device 112. In one of the implementations, the dielectriclayer 122 is the topmost dielectric layer of the redistributionstructure 120. In addition, the dielectric layer 122 is disposed on theredistribution circuit layer 124 and reveals a part of theredistribution circuit layer 124. In some embodiments, the thickness ofthe dielectric layer 122 substantially ranges from 2 μm to 10 μm. Thematerial of the dielectric layer 122 of the redistribution structure 120may include organic polymer such as, but not limited to, polyimide, etc.The material of the redistribution circuit layer 124 may include copper,or any other suitable materials. Then, in some embodiments, an underbump metallization layer 132 and at least one connecting pad 134 areformed on the part of the redistribution circuit layer 124 revealed bythe dielectric layer 122. The under bump metallization layer 132 and theconnecting pad 134 may be formed by sputtering, evaporation, orelectroless plating, etc.

Referring to FIG. 5, a protection layer 140 is formed on an uppersurface of the redistribution structure 120. The protection layer 140 atleast covers the dielectric layer 122. In one of the implementations,the protection layer 140 is formed on the dielectric layer 122, theunder bump metallization layer 132 and the connecting pad 134. In otherwords, the protection layer 140 covers the upper surface of theredistribution structure 120 entirely, including top surfaces of theunder bump metallization layer 132, the connecting pad 134 and thedielectric layer 122. In some embodiments, an oxygen permeability and/ora water vapor permeability of the protection layer 140 is substantiallylower than an oxygen permeability and/or a vapor permeability of thedielectric layer 122. Therefore, the protection layer 140 is configuredto prevent oxygen and/or water vapor, which could have permeated throughthe dielectric layer 122, from contacting the redistribution circuitlayer 124 underneath and forming copper oxide on the surface of theredistribution circuit layer 124, which would lead to delaminationbetween the dielectric layer 122 and the redistribution circuit layer124. Accordingly, the configuration of the protection layer 140 canprevent the formation of copper oxide and the delamination between thedielectric layer 122 and the redistribution circuit layer 124, so as toimprove yield rate of the semiconductor package 100.

In general, the oxygen and/or water vapor permeability of an inorganicmaterial is usually lower than the oxygen and/or water vaporpermeability of an organic material. Accordingly, in some embodiments,the protection layer 140 may be an inorganic protection layer 140. Forexample, the protection layer 140 may include inorganic material suchas, but not limited to, aluminum oxide (Al₂O₃), silicon dioxide (SiO₂),or silicon nitride (SiN_(x)). In some embodiments, the protection layer140 is formed by atomic layer deposition process, and the thickness ofthe protection layer 140 ranges from 100 Angstrom (Å) to 200 Å, which ismuch thinner than the thickness of the dielectric layer 122. In oneembodiment, the thickness of the protection layer 140 is about 150 Å.

Referring to FIG. 6, in some embodiments, at least one conductive bump150 is formed on the under bump metallization layer 132, and at leastone integrated passive device (IPD) 160 is formed on the connecting pad134. The conductive bump 150 and the IPD 160 are electrically connectedto the redistribution circuit layer 124. The formation of the conductivebump 150 may include placing solder balls on the under bumpmetallization layer 132, and then reflowing the solder balls. Inalternative embodiments, the formation of the conductive bump 150 mayinclude performing a plating process to form solder regions on the underbump metallization layer 132, and then reflowing the solder regions. Theconductive bump 150 may also include conductive pillars, or conductivepillars with solder caps, which may also be formed through plating. TheIPD 160 may be fabricated using standard wafer fabrication technologiessuch as thin film and photolithography processing, and may be mounted onthe connecting pad 134 through, for example, flip-chip bonding or wirebonding, etc. In the present embodiment, the protection layer 140 islocated between the conductive bump 150 and the under bump metallizationlayer 132, and located between the IPD 160 and the connecting pad 134.Since the thickness of the protection layer 140 is extremely thin, e.g.about 100 Å-200Å, the conductive bump 150 and the IPD 160 can still beelectrically connected to the under bump metallization layer 132 and theconnecting pad 134 respectively due to current diffusion.

FIG. 6A is a schematic cross sectional view of one of various stages inthe manufacturing process of a semiconductor package according toanother exemplary embodiment of the present disclosure. It is noted thatthe structure shown in FIG. 6A contains many features same as or similarto the structure disclosed earlier with FIG. 6. For purpose of clarityand simplicity, detail description of same or similar features may beomitted, and the same or similar reference numbers denote the same orlike components. The main differences between the structure shown inFIG. 6A and the structure shown in FIG. 6 are described as follows.

In the present embodiment, the protection layer 140′ covers thedielectric layer 122 and includes at least one opening OP I revealingthe under bump metallization layer 132. In some embodiments, theprotection layer 140′ may include a plurality of openings OP1, OP2 forrevealing the under bump metallization layer 132 and the connecting pads134. In some embodiments, the openings OP1, OP2 of the protection layer140′ can be formed by, for example, etching process, etc. Then, at leastone conductive bump 150 and at least one IPD 160 are formed on the underbump metallization layer 132 and the connecting pad 134 revealed by theopenings OP1, OP2. The conductive bump 150 and the IPD 160 areelectrically connected to the redistribution circuit layer 124. Theformation of the conductive bump 150 and the IPD 160 may be the same asthat of the conductive bump 150 and the IPD 160 described in FIG. 6. Inthe present embodiment, the conductive bump 150 and the under bumpmetallization layer 132 are in direct contact. Similarly, the IPD 160and the connecting pad 134 are also in direct contact. Thereby, theelectrical performance of the semiconductor package can be enhanced.

Referring to FIG. 7, the carrier 10 may be removed. It is noted thatFIG. 7 to FIG. 8 illustrate the subsequent stages after the stage shownin FIG. 6 in the manufacturing process of the semiconductor package.However, it should be well understood that the manufacturing processillustrated in FIG. 7 to FIG. 8 may also be applied to the resultantstructure illustrated in FIG. 6A. In some embodiments, the carrier 10 isdetached from the encapsulated semiconductor device 110 and thedielectric layer 190 (if any), by causing the de-bonding layer 11 tolose or reduce adhesion. The de-bonding layer 11 is then removed alongwith the carrier 10. For example, the de-bonding layer 11 may be exposedto UV light, so that the de-bonding layer 11 loses or reduces adhesion,and hence the carrier 10 and the de-bonding layer 11 can be removed fromthe encapsulated semiconductor device 110 and the dielectric layer 190(if any).

In the embodiments of having the dielectric layer 190, a patterningprocess may then be performed on the dielectric layer 190 to form aplurality of openings 192. Accordingly, the dielectric layer 190′ havinga plurality of openings 192 are formed. The openings 192 are located onthe conductive pillars 116 respectively to reveal the bottom ends of theconductive pillars 116. In some embodiments, the openings 192 may beformed by photolithography process, laser drilling process, etc.

Referring to FIG. 8, a plurality of conductive bumps 170 may be formedon the encapsulated semiconductor device 110 to be electricallyconnected to the conductive pillars 116. In some embodiments, theconductive bumps 170 are disposed in the openings 192 of the dielectriclayer 190′ to be connected to the conductive pillars 116. Then, anothersemiconductor device 180 is disposed on the conductive bumps 170, and iselectrically connected to the conductive pillars 116 through theconductive bumps 170. In other words, the semiconductor device 180 ismounted on the encapsulated semiconductor device 110 through theconductive bumps 170. In some embodiments, the semiconductor device 180may be packages, device dies, passive devices, and/or the like. In someembodiments, the semiconductor package 100 may combine verticallydiscrete memory and logic packages, and the semiconductor device 180 maybe employed in a memory such as Dynamic Random Access Memory and others,but the disclosure is not limited thereto.

In some embodiments, the bonding of the semiconductor device 180 may beperformed using flip chip bonding through the conductive bumps 170,which may comprise solder, for example. In some embodiments, anunderfill (not shown) may be formed between the encapsulatedsemiconductor device 110 and the semiconductor device 180 to encapsulatethe conductive bumps 170. It is appreciated that semiconductor device112 in the encapsulated semiconductor device 110 and the semiconductordevice 180 may be arranged differently than in the illustrated exemplaryembodiments. Then, the wafer-level package may then be sawed into aplurality of semiconductor packages 100 independent from one another. Atthe time, the manufacturing process of the semiconductor package 100 maybe substantially done.

FIG. 8A illustrates a cross sectional view of a semiconductor packageaccording to some exemplary embodiments of the present disclosure. It isnoted that the semiconductor package 100 a shown in FIG. 8A containsmany features same as or similar to the semiconductor package 100disclosed earlier with FIG. 8. For purpose of clarity and simplicity,detail description of same or similar features may be omitted, and thesame or similar reference numbers denote the same or like components.The main differences between the semiconductor package 100 a shown inFIG. 8A and the semiconductor package 100 shown in FIG. 8 are describedas follows.

As mentioned earlier, the step of forming the dielectric layer 190 onthe carrier 10 is optional. Accordingly, in the embodiments of nothaving the dielectric layer 190 on the carrier 10 as shown in FIG. 8A,after the carrier 10 is removed, the bottom ends of the conductivepillars 116 are revealed. The bottom ends of the conductive pillars 116are level with the bottom surface of the semiconductor device 112 andthe bottom surface of the encapsulating material 114. In the embodimentsof the dielectric layer 190 being omitted, a grinding process may beperformed to lightly grind the back surface of encapsulatedsemiconductor device 110 after the carrier 10 is removed. Alternatively,the grinding process may be skipped. Accordingly, in the semiconductorpackage 100 a shown in FIG. 8A, the conductive bumps 170 are disposeddirectly on the conductive pillars 116 for the semiconductor device 180to be mounted thereon.

FIG. 9 to FIG. 12 are schematic cross sectional views of various stagesin the manufacturing process of a semiconductor package according tosome exemplary embodiments of the present disclosure. It is noted thatthe manufacturing process of the semiconductor package 200 shown in FIG.9 to FIG. 12 contains many features same as or similar to themanufacturing process of the semiconductor package 100 disclosed earlierwith FIG. 1 to FIG. 8. The structure shown in FIG. 9 may becorresponding to the structure shown in FIG. 4, and similar referencenumbers denote similar components. For purpose of clarity andsimplicity, detail description of same or similar features may beomitted.

Referring to FIG. 9, the redistribution structure 220 is formed on theencapsulated semiconductor device 210. In some embodiments, theencapsulated semiconductor device 210 is formed by disposing thesemiconductor device 212 on the carrier 20 and then encapsulating thesemiconductor device 212 and the conductive pillars 216 by theencapsulating material 214. In some embodiments, the semiconductordevice 212 is attached or adhered over the carrier 20 through a dieattach film 212 c, or the like. The redistribution structure 220 iselectrically connected to a plurality of electrical terminals 212 a ofthe semiconductor device 212.

In some embodiments, a plurality of dielectric layers and redistributioncircuit layers may be stacked on top of one another alternately to formthe redistribution structure 220. In the present embodiment, theredistribution structure 220 at least includes a dielectric layer 222and a redistribution circuit layer 224 electrically connected to thesemiconductor device 212 and the conductive pillars 216. In one of theimplementations, the dielectric layer 222 and the redistribution circuitlayer 224 may be the topmost dielectric layer and the topmostredistribution circuit layer among the redistribution structure 220. Inaddition, the redistribution circuit layer 224 is disposed on top of thedielectric layer 222 as shown in FIG. 9 and the top surface of theredistribution circuit layer 224 may be substantially coplanar with thetop surface of the dielectric layer 222. In some embodiments, thethickness of the dielectric layer 222 substantially ranges from 2 μm to10 μm. The material of the dielectric layer 222 of the redistributionstructure 220 may include organic polymer such as, but not limited to,polyimide, etc. The material of the redistribution circuit layer 224 mayinclude copper, or any other suitable materials. In some embodiments, aredistribution structure 290 including at least one dielectric layer 292and at least one redistribution circuit layer 294 may be formed on thecarrier 20 before the encapsulated semiconductor device 210 is formed onthe carrier 20.

Referring to FIG. 10, in some embodiments, a protection layer 240 isformed on an upper surface of the redistribution structure 220. In thepresent embodiments, the protection layer 240 covers the upper surfaceof the redistribution structure 220 entirely. In other words, theprotection layer 240 covers the top surface of the dielectric layer 222and the top surface of the redistribution circuit layer 224.

Referring to FIG. 11, the carrier 20 may be removed. In someembodiments, the carrier 20 is detached from the encapsulatedsemiconductor device 210 and the redistribution structure 290, bycausing the de-bonding layer (not shown) on the carrier to lose orreduce adhesion. The de-bonding layer is then removed along with thecarrier 20. For example, the de-bonding layer may be exposed to UVlight, so that the de-bonding layer loses or reduces adhesion, and hencethe carrier 20 and the de-bonding layer can be removed from theencapsulated semiconductor device 210 and the redistribution structure290. Then, a plurality of electrical terminals 270 are formed on theredistribution structure 290 and electrically connected to theredistribution circuit layer 294.

Referring to FIG. 12, an adhesive 230 is formed on the protection layer240, and then an insulating cover 250 is disposed on the protectionlayer 240 through the adhesive 230. In other words, the adhesive 230 isdisposed between the insulating cover 250 and the redistributionstructure 220. In addition, a semiconductor device 280 may be mounted onthe electrical terminals 270. In some embodiments, the semiconductordevice 280 may be packages, device dies, passive devices, and/or thelike, but the disclosure is not limited thereto. At the time, themanufacturing method of the semiconductor package 200 may besubstantially done. In the present embodiment, the semiconductor device212 may be a fingerprint sensor such as a capacitive fingerprint sensor,etc., and the protection layer 240 may function as the dielectric layerbetween the redistribution circuit layer 224 and the insulating cover250 disposed thereon. In some embodiments, the insulating cover 250 maybe a cover glass, but the disclosure is not limited thereto. In someembodiments, the protection layer 240 may be an inorganic protectionlayer 240, and includes inorganic material such as, but not limited to,aluminum oxide (Al₂O₃), silicon dioxide (SiO₂), or silicon nitride(SiN_(x)). In some embodiments, the protection layer 240 is formed byatomic layer deposition process, and the thickness thereof ranges from100 Å to 200 Å. In one embodiment, the thickness of the protection layer240 is about 150 Å, which is much thinner than the thickness of theregular dielectric layer (about 2 μm to 10 μm in thickness).

In general, the simplest form of a capacitor consists of two conductors,e.g. two metal plates, separated by an insulator. The following formulashows the parameters which influence capacitance C:

$C = {ɛ\frac{A}{d}}$

Where C is the capacitance; ε is the permittivity, also calleddielectric constant of the insulating material between the plates; A isthe area of the plates; d is the distance between the plates.

Therefore, by replacing conventional dielectric layer (e.g. organicpolymer such as polyimide, etc.) with the protection layer 240, thethickness of the protection layer 240 (i.e. the distance d between themetal plates) reduces significantly. For example, the thickness of theprotection layer 240 is significantly reduced from about 7 μm (e.g. thethickness of a conventional dielectric layer) to about 150 Å (about 467times thinner than the conventional dielectric layer), which is alsoattributed to achieve greater capacitance of the protection layer 240.In addition, the permittivity of the protection layer 240 (e.g. ! isabout 8) is much higher than the permittivity of the conventionaldielectric layer (e.g. ε is about 3). Accordingly, the capacitance ofthe protection layer 240 increases significantly.

Moreover, the equivalent capacitance of multiple capacitors (e.g.protection layer 240, adhesive 230, insulating cover 250, finger, etc.)connected in series can be stated as:

$C_{t} = \frac{1}{\frac{1}{C_{f}} + \frac{1}{C_{g}} + \frac{1}{C_{a}} + \frac{1}{C_{p}}}$

Where C_(t) is the equivalent capacitance of capacitors; C_(f) is thecapacitance of a finger; C_(g) is the capacitance of the insulatingcover; C_(a) is the capacitance of the adhesive; C_(p) is thecapacitance of the protection layer.

Therefore, since the capacitance of the protection layer 240 increasessignificantly by replacing conventional dielectric layer with theprotection layer 240, the equivalent capacitance C_(t) of thefingerprint sensor of the semiconductor package 200 also increasesaccordingly. Therefore, the semiconductor package 200 can providesfingerprint-sensing function with higher sensitivity.

In addition, owing to the oxygen and/or water vapor permeability of theprotection layer 240 substantially lower than the oxygen and/or watervapor permeability of the dielectric layer 222, the configuration of theprotection layer 240 can prevent oxygen and/or water vapor fromcontacting the redistribution circuit layers underneath. Accordingly,the configuration of the protection layer 240 can prevent the formationof copper oxide and the delamination between the dielectric layer 222and the redistribution circuit layer 224, so as to improve yield rate ofthe semiconductor package 200.

In accordance with some embodiments of the disclosure, a semiconductorpackage includes an encapsulated semiconductor device, a redistributionstructure, and a protection layer. The encapsulated semiconductor deviceincludes a semiconductor device and an encapsulating materialencapsulating the semiconductor device. The redistribution structure isdisposed on the encapsulated semiconductor device and includes adielectric layer and a redistribution circuit layer electricallyconnected to the semiconductor device. The protection layer at leastcovers the dielectric layer, wherein an oxygen permeability or a watervapor permeability of the protection layer is substantially lower thanan oxygen permeability or a vapor permeability of the dielectric layer.

In accordance with some embodiments of the disclosure, a semiconductorpackage includes an encapsulated semiconductor device, a redistributionstructure, and an inorganic protection layer. The encapsulatedsemiconductor device includes a semiconductor device and anencapsulating material encapsulating the semiconductor device. Theredistribution structure is disposed on the encapsulated semiconductordevice and includes a dielectric layer and a redistribution circuitlayer electrically connected to the semiconductor device. The inorganicprotection layer covers an upper surface of the redistributionstructure.

In accordance with some embodiments of the disclosure, a manufacturingmethod of a semiconductor package includes the following steps. Anencapsulated semiconductor device is formed on a carrier, wherein theencapsulated semiconductor device includes a semiconductor device and anencapsulating material encapsulating the semiconductor device. Aredistribution structure is formed on the encapsulated semiconductordevice, wherein the redistribution structure includes a dielectric layerand a redistribution circuit layer electrically connected to thesemiconductor device. A protection layer is formed on an upper surfaceof the redistribution structure, wherein an oxygen permeability or awater vapor permeability of the protection layer is substantially lowerthan an oxygen permeability or a vapor permeability of the dielectriclayer. The carrier is removed.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

1. A semiconductor package, comprising: an encapsulated semiconductordevice comprising a semiconductor device and an encapsulating materialencapsulating the semiconductor device; a redistribution structuredisposed on the encapsulated semiconductor device and comprising adielectric layer and a redistribution circuit layer electricallyconnected to the semiconductor device; and a protection layer at leastcovering the dielectric layer, wherein an oxygen permeability or a watervapor permeability of the protection layer is substantially lower thanan oxygen permeability or a vapor permeability of the dielectric layer.2. The semiconductor package as claimed in claim 1, wherein theprotection layer comprises inorganic material.
 3. The semiconductorpackage as claimed in claim 1, wherein the protection layer comprisesaluminum oxide (Al2O3), silicon dioxide (SiO2), or silicon nitride(SiNx).
 4. The semiconductor package as claimed in claim 1, furthercomprising an under bump metallization layer disposed on theredistribution circuit layer revealed by the dielectric layer and aconductive bump disposed on the under bump metallization layer andelectrically connected to the redistribution circuit layer.
 5. Thesemiconductor package as claimed in claim 4, wherein the protectionlayer covers the dielectric layer and the under bump metallizationlayer, and is disposed between the under bump metallization layer andthe conductive bump.
 6. The semiconductor package as claimed in claim 4,wherein the protection layer covers the dielectric layer and comprisesan opening revealing the under bump metallization layer, the conductivebump is disposed on the under bump metallization layer revealed by theopening.
 7. The semiconductor package as claimed in claim 1, furthercomprising an insulating cover disposed on the redistribution structureand an adhesive disposed between the insulating cover and theredistribution structure, wherein the protection layer covers the uppersurface of the redistribution structure entirely and the semiconductordevice is a fingerprint sensor.
 8. The semiconductor package as claimedin claim 1, wherein a thickness of the protection layer ranges from 100Angstrom (Åto 200 Å.
 9. A semiconductor package, comprising: anencapsulated semiconductor device comprising a semiconductor device andan encapsulating material encapsulating the semiconductor device; aredistribution structure disposed on the encapsulated semiconductordevice and comprising a dielectric layer and a redistribution circuitlayer electrically connected to the semiconductor device; and aninorganic protection layer covering an upper surface of theredistribution structure.
 10. The semiconductor package as claimed inclaim 9, wherein an oxygen permeability or a water vapor permeability ofthe inorganic protection layer is substantially lower than an oxygenpermeability or a vapor permeability of the dielectric layer.
 11. Thesemiconductor package as claimed in claim 10, wherein the inorganicprotection layer comprises aluminum oxide (Al2O3), silicon dioxide(SiO2), or silicon nitride (SiNx).
 12. The semiconductor package asclaimed in claim 10, further comprising an under bump metallizationlayer disposed on the redistribution circuit layer and a conductive bumpdisposed on the under bump metallization layer, wherein the inorganicprotection layer covers the dielectric layer and is disposed between theunder bump metallization layer and the conductive bump.
 13. Thesemiconductor package as claimed in claim 10, further comprising aninsulating cover disposed on the redistribution structure and anadhesive disposed between the insulating cover and the redistributionstructure, wherein the inorganic protection layer covers the uppersurface of the redistribution structure entirely and the semiconductordevice is a fingerprint sensor.
 14. A manufacturing method of asemiconductor package, comprising: forming an encapsulated semiconductordevice on a carrier, wherein the encapsulated semiconductor devicecomprises a semiconductor device and an encapsulating materialencapsulating the semiconductor device; forming a redistributionstructure on the encapsulated semiconductor device, wherein theredistribution structure comprises a dielectric layer and aredistribution circuit layer electrically connected to the semiconductordevice; and forming a protection layer on an upper surface of theredistribution structure, wherein an oxygen permeability or a watervapor permeability of the protection layer is substantially lower thanan oxygen permeability or a vapor permeability of the dielectric layer;and removing the carrier.
 15. The manufacturing method of thesemiconductor package as claimed in claim 14, wherein the protectionlayer is formed by atomic layer deposition process.
 16. Themanufacturing method of the semiconductor package as claimed in claim14, further comprising: forming an under bump metallization layer on theredistribution circuit layer revealed by the dielectric layer; andforming a conductive bump on the under bump metallization layer.
 17. Themanufacturing method of the semiconductor package as claimed in claim16, wherein the protection layer is formed on the dielectric layer andthe under bump metallization layer before the conductive bump is formedon the under bump metallization layer.
 18. The manufacturing method ofthe semiconductor package as claimed in claim 16, wherein the protectionlayer is formed on the dielectric layer and the under bump metallizationlayer before the conductive bump is formed on the under bumpmetallization layer
 19. The semiconductor package as claimed in claim18, wherein forming the protection layer on the upper surface of theredistribution structure further comprises forming an opening revealingthe under bump metallization layer, and the conductive bump is disposedon the under bump metallization layer revealed by the opening.
 20. Themanufacturing method of the semiconductor package as claimed in claim16, further comprising: forming an adhesive on the protection layer,wherein the protection layer covers the upper surface of theredistribution structure entirely; and disposing an insulating cover onthe protection layer through the adhesive, wherein the semiconductordevice is a fingerprint sensor.